Multiscale Thermal Modeling of GaN Electronics
In this work, we are develping a multiscale thermal model to predict the hot spot temperature in GaN transistors. In these devices, intense heating occurs at the gate edge on the drain side of the transistor. However, the details of the electron-phonon transport in this region is often ignored. To address the transport on this scale, we are developing a coupled Monte Carlo-phonon simulator where phonon transport is handled using the Discrete Ordinates Method. Further from the hot spot, thermal transport is solved using diffusive equations. The goal is to better predict the temperature distribution in GaN devices as a function of electrical bias conditions.